b,mar,2012 digital transistors (built-in resistors) dta143tm/dta143te/dta143tua dta143tka /DTA143TCA/dta143tsa equivalent circuit digital transistor (pnp) features ? built-in bias resistors enable the c onfiguration of an inverter circuit without connecting external input re sistors(see equivalent circuit) ? the bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.they also have the advantage of almost completely eliminating parasitic effects ? only the on/off conditions need to be se t for operation, making device design easy pin connenctions and marking dta143tm sot-723 1. in 2. gnd 3. out marking:93 dta143te sot-523 1. in 2. gnd 3. out marking:93 dta143tua sot-323 1. in 2. gnd 3. out marking:93 dta143tka sot-23-3l 1. in 2. gnd 3. out marking:93 DTA143TCA sot-23 1. in 2. gnd 3. out marking:93 dta143tsa to-92s 1. gnd 2. out 3. in 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,jun,2013
maximum ratings(ta= 25 unless otherwise noted) limits(dta143t ) symbol parameter m e ua ka ca sa unit v cbo collector-base voltage -50 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -100 ma p d power dissipation 100 150 200 200 200 300 mw t j junction temperature 150 t stg storage temperature -55 +150 electrical characteristics (ta= 25 unless otherwise specified) parameter symbol conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=-50a,i e =0 -50 v collector-emitter breakdown voltage v (br)ceo ic=-1ma,i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-50a,i c =0 -5 v collector cut-off current i cbo v cb =-50v,i e =0 -0.5 a emitter cut-off current i ebo v eb =-4v,i c =0 -0.5 a collector-emitter saturation voltage v ce(sat) i c =-5ma,i b =-0.25ma -0.3 v dc current gain h fe v ce =-5v,i c =-1ma 100 600 input resistor r 1 3.29 4.7 6.11 k ? transition frequency f t v ce =-10v,i e =5ma, f=100mhz 250 mhz 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,jun,2013
-1 -10 -100 1000 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1e-3 -0.01 -0.1 -1 -10 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 -0.1 -1 -10 -100 -0.01 -0.1 -1 0481 21 62 0 0 2 4 6 8 10 -0.1 -1 -10 -100 -0.1 -1 -10 -100 100 t a =25 t a =100 v ce =-5v 300 -3 -30 h fe ?? i c collector current i c (ma) dc current gain h fe off characteristics t a =100 t a =25 v ce =-5v collector current i c (ma) input voltage v i(off) (v) dta143tm dta143tsa dta143tua/ca/ka dta143te p d ?? t a power dissipation p d (mw) ambient temperature t a ( ) -0.3 -0.3 -0.03 -30 -3 v cesat ?? i c t a =25 t a =100 i c /i b =20 collector emitter voltage v cesat (v) collector current i c (ma) f=1mhz t a =25 c o ?? v r output capacitance c o (pf) reverse bias voltage v r (v) -30 -3 -0.3 dta143txx on characteristics t a =25 t a =100 v ce =-0.3v -3 -0.3 -30 collector current i c (ma) input voltage v i(on) (v) 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,jun,2013
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